Semiconductor structure and method of forming thereof

ABSTRACT

A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate; a gate electrode disposed within the substrate; a gate dielectric layer disposed within the substrate and surrounding the gate electrode; a plurality of first protection structures disposed over the gate electrode; a second protection structure disposed over the gate dielectric layer; and a pair of source/drain regions on opposing sides of the gate dielectric layer.

BACKGROUND

Electronic equipment using semiconductor devices is essential for manymodern applications. In the semiconductor devices, it is desirable toimprove transistor performance even as devices become smaller due toongoing reductions in device scale. Further, it is desirable tomanufacture integrated circuit semiconductor devices that incorporatetransistors operated at various ranges of operating voltages in a singleintegrated circuit. However, the manufacturing of the integrated circuitthat incorporates transistors operated at different voltages involveextra steps and operations, thereby increasing manufacturing cost andtime. As such, there are many challenges in efficiently integratingtransistors of different operating voltages in a single semiconductorsubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the embodiments of the present disclosure are best understoodfrom the following detailed description when read with the accompanyingfigures. It is noted that, in accordance with the standard practice inthe industry, various structures are not drawn to scale. In fact, thedimensions of the various structures may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart representing a method for forming a semiconductorstructure according to aspects of one or more embodiments of the presentdisclosure.

FIGS. 2 through 30 are cross-sectional views of a semiconductorstructure at different fabrication stages constructed according toaspects of one or more embodiments of the present disclosure.

FIG. 31 is a top view of a semiconductor structure, according to aspectsof one or more embodiments of the present disclosure.

FIG. 32 is a cross-sectional view of a semiconductor structure at afabrication stage according to aspects of one or more embodiments of thepresent disclosure.

FIG. 33 illustrates a top view of a semiconductor structure according toaspects of one or more embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of elements and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “over,” “upper,” “on,” and the like, may be used herein forease of description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

As used herein, the terms such as “first,” “second” and “third” describevarious elements, components, regions, layers and/or sections, theseelements, components, regions, layers and/or sections should not belimited by these terms. These terms may be only used to distinguish oneelement, component, region, layer or section from another. The termssuch as “first,” “second” and “third” when used herein do not imply asequence or order unless clearly indicated by the context.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation.

Along the development of semiconductor industry, it has been a trend tofabricate as many semiconductor devices as possible on a single chip.For example, different semiconductor devices operated at ranges of lowvoltages, medium voltages, and high voltages are manufactured in asingle chip. Generally, these semiconductor devices with differentoperating voltages are manufactured using different processes. Forexample, semiconductor devices manufactured by the replacement gatetechnology, also known as high-k metal gate (HKMG) technology, may beapplied in the low-voltage devices. However, there are concerns inintegrating the processes of manufacturing high-voltage devices ormedium-voltage devices with those of manufacturing low-voltage devices,especially for the 28-nm technology node and beyond. To increase theyield of device integration, various factors should be considered, suchas various device dimensions, e.g., different gate dielectricthicknesses, channel lengths, and/or channel widths of devices withdifferent operating voltages. Also, since planarization processes areneeded when fabricating the devices (used for planarizing metals orinterlayer dielectrics for example), the dishing effect (applied to thehigh-voltage devices or medium-voltage devices with large device areas)may degrade the device performance.

Embodiments of a semiconductor structure and a forming method thereofare therefore provided. The semiconductor structure may have afirst-voltage device disposed in a first device region and asecond-voltage device disposed in a second device region. In someembodiments, the method for forming the semiconductor structure includesforming the low-voltage devices over the high/medium-voltage devices toshare the HKMG processes of forming replacement gates in order to reducemanufacturing cost. The method further includes forming a protectionstructure prior to the forming of the low-voltage devices to providestructural support during the planarization processes.

FIG. 1 is a flowchart representing a method 100 for forming asemiconductor structure 200 according to aspects of one or moreembodiments of the present disclosure. The method 100 for forming thesemiconductor structure 200 includes an operation 102 where a substrateis received. The method 100 further includes an operation 104 where arecess is etched in the substrate. The method 100 further includes anoperation 106 where a first gate dielectric layer is deposited onsidewalls and a bottom of the recess. The method 100 further includes anoperation 108 where a gate electrode is deposited over the gatedielectric layer. The method 100 further includes an operation 110 wherea first protection structure is formed over the substrate to cover a topsurface of the gate dielectric layer. The method 100 further includes anoperation 112 where a plurality of second protection structures areformed over the gate electrode within the first protection structure.

FIGS. 2 through 30 are schematic drawings illustrating the semiconductorstructure 200 at different fabrication stages constructed according toaspects of one or more embodiments of the present disclosure.

Referring to FIG. 2 , a substrate 202 is received or formed according tooperation 102. The substrate 202 may be a semiconductor wafer such as asilicon wafer. Alternatively or additionally, the substrate 202 mayinclude elementary semiconductor materials, compound semiconductormaterials, or alloy semiconductor materials. Examples of elementarysemiconductor materials may be, for example but not limited thereto,single crystal silicon, polysilicon, amorphous silicon, germanium (Ge),and/or diamond. Examples of compound semiconductor materials may be, forexample but not limited thereto, silicon carbide (SiC), gallium arsenic(GaAs), gallium phosphide (GaP), indium phosphide (InP), indium arsenide(InAs), and/or indium antimonide (InSb). Examples of alloy semiconductormaterial may be, for example but not limited thereto, SiGe, GaAsP,AlinAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP. The substrate 202 mayalso be a bulk semiconductor substrate or a Semiconductor-On-Insulator(SOI) substrate. In accordance with some exemplary embodiments, thesubstrate 202 is doped with p-type impurities. In alternativeembodiments, the substrate 202 is doped with n-type impurities.

The substrate 202 may include various device regions. In someembodiments, the substrate 202 includes a first device region 202 a anda second device region 202 b. The first device region 202 a and thesecond device region 202 b may include different devices with differentoperating voltage ranges. For example, the first device region 202 a isa first-voltage device region in which a first-voltage device 210 a (seeFIG. 27 ) is formed. The second device region 202 b is a second-voltagedevice region in which a second-voltage device 210 b (see FIG. 27 ) isformed. The second-voltage device 210 b is configured to operate atoperating voltages (or supply voltages) lower than the respectiveoperating voltages (or supply voltages) of the first-voltage device 210a. In accordance with some exemplary embodiments, the first deviceregion 202 a is a high-voltage (HV) MOS device region or amedium-voltage (MV) MOS device region, while the second device region202 b is a low-voltage (LV) MOS device region.

It is appreciated that the HV, MV, and LV MOS devices are related eachother in their operating voltages. The HV MOS devices are configured tooperate at a voltage range (or supply voltages) higher than that of theMV MOS devices, and the MV MOS devices are configured to operate at avoltage range (or supply voltages) higher than that of the LV MOSdevices. Also, the maximum allowable voltages in the MV MOS devices arelower than the maximum allowable voltages in HV MOS devices, and themaximum allowable voltages in the LV MOS devices are lower than themaximum allowable voltages in the MV MOS devices. In accordance withsome exemplary embodiments, the operating voltages (or the supplyvoltages) of the HV MOS devices are between about 20 V and about 30 V,the operating voltages (or the supply voltages) of the MV MOS devicesare between about 5.0 V and about 10 V, and the operating voltages (orthe supply voltages) of the LV MOS devices are between about 0.5 V andabout 3.0V.

FIGS. 2 through 5 illustrate the formation of shallow trench isolation(STI) regions. Referring to FIG. 2 , a pad layer 204 and a mask layer206 are formed over the substrate 202. The pad layer 204 may include athin film formed of silicon oxide, which may be formed, for example,using a thermal oxidation process. The pad layer 204 may serve as anadhesion layer between the substrate 202 and the mask layer 206. The padlayer 204 may also serve as an etch stop layer during etching the masklayer 206. In accordance with some embodiments of the presentdisclosure, the mask layer 206 is formed of silicon nitride, which maybe formed, for example, using Low-Pressure Chemical Vapor Deposition(LPCVD), thermal nitridation of silicon, Plasma-Enhanced Chemical VaporDeposition (PECVD), or plasma anodic nitridation. The mask layer 206 maybe used as a hard mask during subsequent photolithography process.

Referring to FIG. 3 , a photo resist layer 208 is formed on the masklayer 206 and is then patterned to form openings 212. The mask layer 206and the pad layer 204 are etched through the openings 212, exposing theunderlying substrate 202. The exposed substrate 202 is then etched,forming trenches 214. The photo resist layer 208 is then removed.

Referring to FIG. 4 , dielectric material(s) 216 is filled into thetrenches 214. In some embodiments, the dielectric material 216 includesa liner oxide lining the bottoms and the sidewalls of the opening 212.The liner oxide may be a thermal oxide layer forming by oxidizing asurface layer of the exposed substrate 202. In other embodiments, theliner oxide is formed using a deposition technique that can formconformal oxide layers. In some embodiments, after the formation of theliner oxide, the remaining portions of the trenches 214 are filled withanother dielectric material. In some embodiments, the filling materialincludes silicon oxide, and other dielectric materials such as SiN, SiC,SiON, or the like, may also be used.

Referring to FIG. 5 , a planarization such as Chemical Mechanical Polish(CMP) is then performed to remove excess portions of the dielectricmaterial 216 over the top surface of the mask layer 206. The mask layer206 may serve as a CMP stop layer. The remaining portion of thedielectric material 216 forms isolation structures 218. In someembodiments, the bottom surfaces of isolation structures 218 aresubstantially level with each other.

Referring to FIG. 6 , in subsequent steps, the mask layer 206 and thepad layer 204 are removed. In some embodiments, the mask layer 206 andthe pad layer 204 are removed by etching processes.

Referring to FIG. 7 , a photo resist layer 220 is formed over thesubstrate 202 and patterned to form an opening 222. A portion of thesubstrate 202 is exposed through the opening 222. In some embodiments,at least a portion in the first device region 202 a of the substrate 202is exposed through the opening 222, while the second device region 202 bof the substrate 202 is covered by the photo resist layer 220. The photoresist layer 220 may further cover the isolation structures 218 in thefirst device region 202 a and the second device region 202 b.

Referring to FIG. 8 , the portion of the exposed substrate 202 isetched, forming a recess 224 in the first device region 202 a. Therespective step is shown as operation 104 of the method 100 shown inFIG. 1 . The etching may be performed through a dry etching processusing an etching gas. The etching may also be performed through a wetetching process using an etching solution. As a result of the etching,an upper portion of the substrate 202 in the first device region 202 ais removed. In some embodiments, a depth of the recess 224 may be lessthan a depth of the isolation structures 218. In alternativeembodiments, the depth of the recess 224 may be substantially same asthe depths of the isolation structures 218. The depth of the recess 224is determined by various factors, such as the thickness of the gatedielectric 242 and the thickness of the gate electrode 244 to be formed(see FIG. 14 ). For example, the depth of the recess 224 is so selectedthat the thickness of the gate dielectric 242 may meet thevoltage-sustaining requirement for HV MOS devices or MV MOS devices. Theetching process may be adjusted to determine the maximum allowablevoltage and the saturation current of the resulting HV MOS device or MVMOS device. After the etching, the photo resist layer 220 is removed, asshown in FIG. 9 .

FIGS. 10 and 11 illustrate the formation of a plurality of doped regionsthrough a plurality of implantation processes. The plurality of dopedregions may include a deep well region 232, at least two shallow dopedregions 234 in the first device region 202 a and a deep well region 236in the second device region 202 b. In some embodiments, the deep wellregions 232 and 236 are p-type regions, and the shallow doped regions234 are n-type regions. In alternative embodiments, the deep wellregions 232 and 236 are n-type regions, and the shallow doped regions234 are p-type regions. The implantation processes for forming the deepwell regions 232, 236, and the shallow doped regions 234 may be arrangedin any order.

Referring to FIG. 10 , a photo resist layer (not shown) is formed tocover the substrate 202. The region in which the deep well region 232and the shallow doped regions 234 are to be formed is exposed to theopening of the photo resist layer. In some embodiments, p-type dopants,such as boron and/or indium, are implanted into substrate 202 to formthe deep well region 232. In some embodiments, n-type dopants, such asphosphorous, arsenic, and/or antimony, are implanted to form the shallowdoped regions 234. The photo resist layer is then removed after theimplantation operation is completed.

Referring to FIG. 11 , another photo resist layer (not shown) is formedto cover the substrate 202, with the region in which the deep wellregion 236 is to be formed exposed to the opening of the photo resistlayer. An implantation may be then performed in order to form deep wellregion 236. The deep well region 236 may be implanted with p-typedopants, such as boron or indium. In some embodiments, the deep wellregion 236 has an impurity concentration greater than that of the deepwell region 232. The photo resist layer is then removed after theimplantation operation is completed.

FIGS. 12 through 14 illustrate the formation of a gate structure 240 inthe first device region 202 a. The gate structure 240 may include a gatedielectric 242 and a gate electrode 244. The respective step is shown asoperations 106 and 108 of the method 100 shown in FIG. 1 . Referring toFIG. 12 , a gate dielectric layer 242′ is formed over the substrate 202.In some embodiments, the gate dielectric layer 242′ is formed over thesubstrate 202 in a conformal manner. The gate dielectric layer 242′ maybe deposited within the recess 224. In some embodiments, the gatedielectric layer 242′ is formed to cover the sidewalls and the bottom ofthe recess 224. The thickness T1 of the gate dielectric layer 242′ maybe configured based on different requirements for differentsemiconductor devices. For example, when the gate dielectric 242 to beformed is used as an HV MOS device or an MV MOS device, the thickness T1of the gate dielectric 242 is substantially in a range from about 100angstroms (Å) to about 200 angstroms.

Referring to FIG. 13 , a gate electrode layer 244′ is formed over thesubstrate 202. In some embodiments, the gate electrode layer 244′ isformed over the substrate 202 in a gap-filling manner. The gateelectrode layer 244′ fills the recess 224. The remaining portions of therecess 224 left by the gate dielectric layer 242′ may be filled with thegate electrode layer 244′. The gate electrode layer 244′ is formed fromconductive material(s). In some embodiments, the gate electrode layer244′ includes undoped polycrystalline silicon. In alternativeembodiments, the gate electrode layer 244′ is formed with dopedsemiconductive material e.g., doped polycrystalline silicon, or othersuitable conductive materials e.g., metal.

Referring to FIG. 14 , a planarization such as CMP is then performed toremove excess portions of the gate dielectric layer 242′ and the gateelectrode layer 244′ over the top surface of the substrate 202 and thetop surface of the isolation structures 218. The remaining portions ofthe gate dielectric layer 242′ and the gate electrode layer 244′ form agate structure 240. The gate structure 240 includes the gate dielectric242 and the gate electrode 244. The gate electrode 244 is disposedwithin the substrate 202. The gate dielectric 242 is disposed within thesubstrate 202 and laterally surrounds the gate electrode 244. As shownin FIG. 14 , the bottom surface of the gate structure 240 may be higherthan the bottom surfaces of the isolation structures 218. In alternativeembodiments, the bottom surface of the gate structure 240 is level withthe bottom surfaces of the isolation structures 218. The thickness T2 ofthe gate electrode 244 may be configured based on different requirementsfor different semiconductor devices. For example, when the gateelectrode 244 is used as an HV MOS device or an MV MOS device, thethickness T2 of the gate electrode 244 is substantially in a range fromabout 700 angstroms (Å) to about 1,000 angstroms.

FIGS. 15 through 17 illustrate the formation of a protection structure250. The respective step is shown as operation 110 of the method 100shown in FIG. 1 . Referring to FIG. 15 , a protection layer 251 isformed over the substrate 202. The protection layer 251 may cover thetop surface of the gate structure 240, e.g., the top surface of the gateelectrode 244 and/or the top surface of the gate dielectric 242. In someembodiments, the protection layer 251 further covers the top surface ofthe shallow doped regions 234, the top surfaces of the isolationstructures 218, and the top surface of the deep well region 236.

The protection layer 251 may include a monolayer structure or amultilayer structure. The formation of the protection layer 251 mayinclude depositing blanket dielectric layers. For example, theprotection layer 251 may be a bi-layered structure as shown in FIGS. 15and 16 , but the disclosure is not limited thereto. In some embodiments,the bi-layered protection layer 251 may include a first dielectric layer251 a and a second dielectric layer 251 b. In some embodiments, thefirst and second dielectric layers 251 a and 251 b include high-kdielectric materials having a high dielectric constant, for example,greater than that of thermal silicon oxide (^(˜)3.9). The high-kdielectric material may include hafnium oxide (HfO₂), zirconium oxide(ZrO₂), lanthanum oxide (La₂O₃), aluminum oxide (Al₂O₃), titanium oxide(TiO₂), yttrium oxide (Y₂O₃), strontium titanate (SrTiO₃), hafniumoxynitride (HfO_(x)N_(y)), other suitable metal-oxides, or combinationsthereof. The first and second dielectric layers 251 a and 251 b mayinclude different high-k dielectric materials.

The first dielectric layer 251 a and the second dielectric layer 251 bmay include different materials. For example, the first dielectric layer251 a may be an oxide layer, while the second dielectric layer 251 b maybe a nitride layer. In some embodiments, the first dielectric layer 251a is formed of silicon oxide, while the second dielectric layer 251 b isformed of silicon nitride. In some embodiments, the first dielectriclayer 251 a is formed, for example, using LPCVD, thermal oxidation ofsilicon, PECVD, or plasma anodic oxidation. In some embodiments, theformation of the second dielectric layer 251 b is formed, for example,using LPCVD, thermal nitridation of silicon, PECVD, or plasma anodicnitridation.

Referring to FIG. 16 , a photo resist layer 252 is formed over theprotection layer 251 and is then patterned to form openings exposingportions of the protection layer 251.

Referring to FIG. 17 , the exposed portions of the protection layer 251are etched through the openings of the photo resist layer 252. Theremaining portion of the patterned photo resist layer is used as anetching mask of the etching operation. The photo resist layer 252 isthen removed, and the remaining portions of the protection layer 251form the protection structure 250. The protection structure 250 maycover a portion of the top surface of the gate dielectric 242, a portionof the top surface of the gate electrode 244 and a portion of the topsurface of the shallow doped region 234. The protection structure 250may include a first protection layer 250 a formed from the remainingportions of the first dielectric layer 251 a, and a second protectionlayer 250 b formed from the remaining portions of the second dielectriclayer 251 b. The protection structure 250 has a height H1. The height H1of the protection structure 250 may be configured based on differentrequirements for different semiconductor devices. For example, theheight H1 of the protection structure 250 may be configured based on theheight of the second-voltage device 210 b to be formed in the seconddevice region 202 b. In some embodiments, the height H1 of theprotection structure 250 is in a range from about 300 angstroms (Å) toabout 500 angstroms.

FIG. 18 illustrates a top view of the protection structure 250, the gatestructure 240, the deep well region 232 and the shallow doped regions234 shown in FIG. 17 , in accordance with some embodiments of thepresent disclosure. The deep well region 232 extends in a firstdirection D1 within the substrate 202. In some embodiments, the gatestructure 240 overlaps the deep well region 232 and extends in a seconddirection D2 different from the first direction D1. The second directionD2 may be perpendicular to the first direction D1.

As shown in FIG. 18 , the protection structure 250 overlaps the topsurface of the gate dielectric 242 in a top-view perspective. In someembodiments, the protection structure 250 overlaps the entire topsurface of the gate dielectric 242. For example, the protectionstructure 250 may be in a ring shape overlapping the entire top surfaceof the gate dielectric 242. The protection structure 250 may have twofirst portions 250-1 extending in the first direction D1 and two secondportions 250-2 extending in the second direction D2. The two firstportions 250-1 and the two second portions 250-2 form the ring of theprotection structure 250. In alternative embodiments, the protectionstructure 250 overlaps only a portion of the top surface of the gatedielectric 242. For example, the protection structure 250 includes onlytwo second portions 250-2. In some embodiments, a width W1 of the firstportion 250-1 is substantially same as a width W2 of the second portion250-2. In some embodiments, a length L1 of the first portion 250-1 isless than a length L2 of the second portion 250-2.

In some embodiments, the width W1 (or W2) of the protection structure250 is greater than a width W3 (equal to thickness T1) of the gatedielectric 242. In some embodiments, the width W1 (or W2) is greaterthan 0.25 μm. The protection structure 250 may further have an extensionwidth E1 overlapping a portion of the top surface of the shallow dopedregion 234 and a portion of the top surface of the deep well region 232.In some embodiments, the extension width E1 is greater than 0.125 μm.The protection structure 250 may further have an extension width E2overlapping a portion of the top surface of the gate electrode 244. Insome embodiments, the extension width E2 is less than or substantiallyequal to the extension width E1. In some embodiments, the extensionwidth E2 may be greater than 0.125 μm. The width W1, the width W2, thewidth W3, the length L1, the length L2, the extension width E1 and theextension width E2 may be configured based on different requirements fordifferent semiconductor devices.

Referring to FIG. 19 , gate stacks 260 and 360 are formed in the firstdevice region 202 a and the second device region 202 b, respectively.The respective step is shown as operation 112 of the method 100 shown inFIG. 1 . The gate stacks 260 and 360 may be removed in subsequent stepsand replaced by their respective replacement gates. Accordingly, thegate stacks 260 and 360 are referred to as dummy gates in accordancewith some embodiments. Each of the gate stacks 260 includes a gatedielectric 262 and a gate electrode 264 over the respective gatedielectric 262. Each of the gate stacks 360 includes a gate dielectric362 and a gate electrode 364 over the respective gate dielectric 362.The gate dielectrics 262 and 362 may be formed of silicon oxide, siliconnitride, silicon carbide, or the like. The gate electrodes 264 and 364may include conductive materials. The gate electrodes 264 and 364 areconductive layers. The gate electrodes 264 and 364 may includepolysilicon in accordance with some embodiments. The gate electrodes 264and 364 may also be formed of other conductive materials such as metals,metal alloys, metal silicides, metal nitrides, and/or the like. In someembodiments, each of the gate stacks 260 and 360 further include a hardmask 266 and a hard mask 366, respectively. The hard masks 266 and 366may be formed of silicon nitride, for example, while other materialssuch as silicon carbide, silicon oxynitride, and the like may also beused. In accordance with alternative embodiments, the hard masks 266 and366 are not formed.

In some embodiments, the top surfaces of the gate stacks 260 formed overthe gate electrode 244 of the gate structure 240 are substantially levelwith the top surfaces of the gate stacks 360 formed in the second deviceregion 202 b. The gate stack 260 may have a height H2 substantiallyequal to a height H3 of the gate stack 360. In some embodiments, theheight H1 of the protection structure 250 is substantially same as theheight H2 of the gate stack 260 or the height H3 of the gate stack 360.The height H1 of the protection structure 250 may be configured based onthe height H2 of the gate stack 260 or the height H3 of the gate stack360. In some embodiments, the height H2 of the gate stack 260 is in arange from about 300 angstroms (Å) to about 500 angstroms. In someembodiments, the height H3 of the gate stack 360 is in a range fromabout 300 angstroms (Å) to about 500 angstroms. In some embodiments, thegate stacks 260 and 360 may be formed during a same formation process,and thus have the same height, and are formed of the same materials.

Referring to FIG. 20 , gate spacers 268 and 368 are formed on thesidewalls of each of the respective gate stacks 260 and 360. In someembodiments, gate spacers 258 are also formed on sidewalls of theprotection structure 250. In accordance with some embodiments, each ofthe gate spacers 258, 268 and 368 includes a silicon oxide layer and asilicon nitride layer on the silicon oxide layer. The formation mayinclude depositing blanket dielectric layers, and then performing ananisotropic etching to remove the horizontal portions of the blanketdielectric layers. The available deposition methods include PECVD,LPCVD, sub-atmospheric chemical vapor deposition (SACVD), and otherdeposition methods. In some embodiments, the gate spacers 258, 268 and36 may be formed during a same formation process, and thus are formed ofthe same materials.

Referring to FIG. 21 , source regions and drain regions (collectivelyreferred to as source/drain regions hereinafter) 270 and 370 are formedin the first device region 202 a and the second device region 202 b.Further, doped regions 271 may be formed in the first device region 202a. In addition, the source/drain regions 270 and 370, and the dopedregions 271 may be formed in a single formation process, and thus havethe same depth, and are formed of the same materials.

Referring to the first device region 202 a, the source/drain regions 270may be formed in the shallow doped regions 234, and doped regions 271may be formed in the gate electrode 244. One of the source/drain regions270 formed in the shallow doped regions 234 serves as the source region,and the other one of the source/drain regions 270 formed in the shallowdoped regions 234 serves as the drain region. A channel 273 is formeddirectly underlying the gate dielectric 242 for conducting currentbetween the source/drain regions 270. The channel 273 may be formed inthe upper portion of the deep well region 232. The doped regions 271formed in the gate electrode 244 may serve as a doped region 272 (seeFIG. 22 ) of the gate electrode 244. Referring to the second deviceregion 202 b, the source/drain regions 370 are formed in the deep wellregion 236.

The source/drain regions 270 and 370, and the doped regions 271 may beformed simultaneously in a same implantation process. In someembodiments, the source/drain regions 270 and 370, and the doped regions271 are of n-type, and are heavily doped, and thus are referred to as N+regions. In some embodiments, a photo resist (not shown) is formed overthe substrate 202 to define the location of the source/drain regions 270and 370, and the doped regions 271. The source/drain regions 270 may bespaced apart from the gate dielectric 242 by the protection structure250. Further, the source/drain regions 270 and 370 may have edgesaligned to the edges of the gate spacers 258 and 368, respectively. Thedoped regions 271 may have edges aligned to the edges of the gatespacers 268. Further, a portion of the doped regions 271 may have edgesaligned to the edges of the gate spacers 258.

Referring to FIG. 22 , an annealing operation may be performed. Theannealing operation may include annealing the structure shown in FIG. 21at an elevated temperature. The annealing operation may facilitateactivation and diffusion of the dopants in the doped regions 271 formedin the gate electrode 244, resulting a continuous doped region 272 ofthe gate electrode 244. The doped region 272 may be disposed in an upperportion of the gate electrode 244. The presence of the doped region 272may help alleviating the polysilicon depletion effect of the gateelectrode 244. Unlike the general polysilicon pre-doping approaches,where a polysilicon gate electrode is doped directly after the formationof the polysilicon gate electrode with separate photolithographyoperations, the doped region 272 is formed along with the formation ofthe source/drain regions 270 and 370. Hence, the manufacturingoperations can be simplified, and the production cost can be reduced.

Referring to FIG. 23 , silicide regions 274 and 374 are formed in thefirst device region 202 a and the second device region 202 b,respectively. The formation process may include forming a resistprotective oxide (RPO) over portions of the substrate 202 that are notprotected by the gate spacers 258, 268 and 368, and the protectionstructure 250. The RPO may function as a silicide blocking layer duringthe formation of the silicide regions 274 and 374. The silicide regions274 and 374 may be formed using silicidation such as self-alignedsilicide (salicide), in which a metallic material is formed over thesubstrate 202, the temperature is raised to anneal the substrate 202 andcause reaction between underlying silicon of the substrate 202 and themetal to form silicide, and un-reacted metal is etched away. Thesilicide regions 274 and 374 may be formed in a self-aligned manner onvarious features, such as the source/drain regions 270 and 370 and/orthe doped region 272 of the gate electrode 244, to reduce contactresistance at the interface between these features and the conductivecomponents subsequently formed on the silicide regions 274 or 374.

Referring to FIG. 24 , an inter-layer dielectric (ILD) layer 276 isformed over the substrate 202. The ILD layer 276 is blanket formed to aheight higher than the top surfaces of the gate stacks 260 and 360. TheILD layer 276 is blanket formed to a height higher than the top surfacesof the protection structure 250. The ILD layer 276 may be formed of anoxide using, for example, flowable chemical vapor deposition (FCVD). TheILD layer 276 may also be a spin-on glass formed using spin-on coating.For example, the ILD layer 276 may be formed of phospho-silicate glass(PSG), boro-silicate glass (BSG), boron-doped phospho-silicate glass(BPSG), tetraethyl orthosilicate (TEOS) oxide, TiN, SiOC, or other low-kdielectric materials.

Referring to FIG. 25 , FIG. 25 illustrates a planarization step, whichis performed using, for example, CMP. The CMP is performed to removeexcess portions of the ILD layer 276, until the gate stack 360 isexposed. Since the top surfaces of the gate stacks 260 are level withthe top surface of the gate stack 360, the gate stacks 260 are alsoexposed from the ILD layer 276, after the planarization step. Further,the top surface of the protection structure 250 is also level with thetop surface of the gate stack 360, the protection structure 250 is alsoexposed from the ILD layer 276, after the planarization step. Theplanarization may be stopped on the hard masks 266 and 366, if they arepresent. The planarization may be stopped on the second protection layer250 b, if it is present. Alternatively, the hard masks 266 and 366 areremoved in the planarization, and the gate electrodes 264 and 364 areexposed. Alternatively, the second protection layer 250 b is removed inthe planarization, and the first protection layer 250 a is exposed.

The gate stacks 260 may serve as stop layers for keeping the ILD layer276 from being over-etched during the CMP operation. The protectionstructure 250 may also serve as another stop layer for keeping the ILDlayer 276 from being over-etched during the CMP operation. The gatestacks 260 and the protection structure 250 may prevent unwanted dishingfrom occurring in the first device region 202 a. Accordingly, byreducing the dishing effect, the performance of the first-voltagedevices 210 a may be improved and the cost of manufacturing may bereduced.

FIGS. 26 and 27 illustrate the formation of replacement gate stacks 280and 380 in accordance with some embodiments. Referring to FIG. 25 , thegate stacks 260 and 360 (FIG. 25 ) are removed. In some embodiments, thegate stacks 260 and 360 are removed to form gate trenches 278 and 378,respectively, in the ILD layer 276. In some embodiments, a dry etchingoperation is performed to remove the gate stacks 260 and 360. In someembodiments, the dry etching operation uses F-containing plasma,Cl-containing plasma and/or Br-containing plasma to remove the gatestacks 260 and 360. In some embodiments, the protection structure 250remains in place during the removal of the gate stacks 260 and 360.

In some embodiments, the substrate 202 may include various deviceregions, and the various device regions may include various n-type orp-type MOS devices and one or more passive devices such as a resistor.These different devices may be of different types. In some embodiments,when an I/O MOS device is used, the gate dielectrics 262 and 362 (FIG.25 ) can respectively serve as an interfacial layer (IL). Thus, the gatedielectrics 262 and 362 may not be removed. In alternative embodiments,when a core MOS device is used, the gate dielectrics 262 and 362 areremoved to thereby expose the substrate 202 to the gate trenches 278 and378, respectively.

Referring to FIG. 27 , the gate stacks 260 and 360 (FIG. 25 ) arereplaced by replacement gate stacks 280 and 380, respectively. Each ofthe gate stacks 280 includes a gate dielectric 282 and a gate electrode284 arranged over one another. Each of the gate stacks 380 includes agate dielectric 382 and a gate electrode 384 arranged over one another.The gate dielectrics 282 and 382 may include a high-k dielectricmaterial such as hafnium oxide, lanthanum oxide, aluminum oxide, or thelike. In addition, the gate dielectrics 282 and 382 may be formed duringa single formation process, and thus have the same thicknesses, and areformed of the same dielectric materials.

The gate electrodes 284 and 384 may include conductive layers. In someembodiments, the gate electrodes 284 and 384 may include at least abarrier metal layer, a work functional metal layer and a gap-fillingmetal layer. The barrier metal layer may include, for example but notlimited to, TiN. The work function metal layer may include a singlelayer of TiN, TaN, TaAlC, TiC, TaC, Co, Al, TiAl, HfTi, TiSi, TaSi orTiAIC, or a multilayer of two or more of these materials, but is notlimited to the above-mentioned materials. In some embodiments, thegap-filling metal layer includes a conductive material such as Al, Cu,AlCu, or W, but is not limited to the above-mentioned materials. Theformation methods include PVD, CVD, or the like. In addition, the gateelectrodes 284 and 384 may be formed in a single formation process, andare formed of the same dielectric materials.

A planarization operation (for example, a CMP) is then performed toremove excess portions of the gate dielectrics 282 and 382, and gateelectrodes 284 and 384, leaving the structure shown in FIG. 27 .Referring to the first device region 202 a, at least a portion of theprotection structure 250 may be removed during the planarizationoperation. For example, the top portion of the second protection layer250 b of the protection structure 250 may be removed. The height H1 ofthe protection structure 250 may be reduced. In some embodiments, theprotection structure 250 has a reduced height of the protectionstructure 250 after the planarization operation.

As shown in FIG. 27 , the gate dielectric 282 of the gate stacks 280contacts and overlaps the gate electrode 244, while the protectionstructure 250 contacts and overlaps the gate dielectric 242. Theprotection structure 250 may further contact and overlap a portion ofthe gate electrode 244 and a portion of the shallow doped regions 234.The gate stacks 280 may be electrically connected to the gate structure240. The gate stacks 280 are separated from each other. The protectionstructure 250 may be electrically isolated from the gate structure 240.The protection structure 250 is between the gate stacks 280 and the gatestack 360.

In some embodiments, additional gate stacks 360 are formed in the seconddevice region 202 b. The gate stacks 280 and the gate stacks 360 may becollectively referred to as a plurality of gate structures of the LV MOSdevices. The gate stacks 280 may be referred to as a first subset of thegate structures, while the gate stacks 360 may be referred to as asecond subset of the gate structures. The protection structure 250 islocated between the gate stacks 280 and the gate stacks 360.Accordingly, the first subset and the second subset are separated by theprotection structure 250.

FIG. 28 illustrates a top view of the gate stacks 280, the protectionstructure 250, the gate structure 240 and the source/drain regions 270according to aspects of one or more embodiments of the presentdisclosure. The gate stacks 280 may a width W_(p) and a length L_(p).The width W_(p) and the length L_(p) may be substantially equal. Thewidth W_(p) may be in the range between about 0.4 μm and about 1.0 μm inaccordance with some embodiments. The gate stacks 280 may have differentconfigurations. In alternative embodiments, the width W_(p) is differentfrom the length L_(p). The width W_(p) may be less than the width W2 orthe width W1 of the protection structure 250. In some embodiments, thewidth W_(p) is substantially equal to the width W2 (or the width W1).The width W_(p) and the length L_(p) may be configured based ondifferent requirements for different semiconductor devices.

A spacing S1 is arranged between two adjacent gate stacks 280. Thespacing S1 may be in the range between about 0.4 μm and about 1.0 μm inaccordance with some embodiments. The spacing S1 may be greater than thewidth W_(p). In some embodiments, a ratio of the width W, to the spacingS1 is less than 1. A spacing S2 is arranged between the protectionstructure 250 and the neighboring gate stack 280. In some embodiments,the spacing S2 is less than or substantially equal to the spacing S1.The spacing S1 and the spacing S2 may be configured based on differentrequirements for different semiconductor devices.

The gate stacks 280 land on the gate electrode 244. Each of the gatestacks 280 overlaps the gate electrode 244. In some embodiments, an areaof the gate electrode 244 exposed from the protection structure 250 isdefined as X. A total area of the gate stacks 280 overlapping the gateelectrode 244 is defined as Y. A ratio Y/X may be in the range betweenabout 50% and about 80% in accordance with some embodiments. The ratioY/X may be also referred to as a pattern density of the gate stacks 280.In other words, the pattern density of the gate stacks 280 may be in therange between about 50% and about 80%. The pattern density of the gatestacks 280 may be configured based on different requirements fordifferent semiconductor devices.

Based on the operations with reference to FIGS. 27 and 28 , an exemplaryfirst-voltage device 210 a and an exemplary second-voltage device 210 bare thus formed. The first-voltage device 210 a includes the gateelectrode 244, the gate dielectric 242, and the source/drain regions270. The second-voltage device 210 b includes the gate electrode 384,the gate dielectric 382, and the source/drain regions 370. The gatestacks 280 formed over the first-voltage device 210 a may serve asprotection structures. For example, the gate stacks 280 may serve asprotection structures for protecting the underlying gate structure 240during the planarization of the ILD layer 276. The protection structure250 encircles the gate stacks 280 from a top-view perspective. Theprotection structure 250 may serve as another protection structure forprotecting the underlying gate dielectric 242 during the planarizationof the ILD layer 276. The protection structure 250 may further serve asspacers for the gate structure 240.

In accordance with some embodiments, the first-voltage device 210 a isan MV MOS device or a HV MOS device, while the second-voltage device 210b is a LV MOS device. In some embodiments, the thickness of the gatedielectric 382 (and 282) is selected to match the operating voltage ofthe second-voltage device 210 b. The gate dielectric 242 of thefirst-voltage device 210 a is thick enough to sustain the mediumvoltages or high voltages. The thickness of the gate dielectric 382 (and282) is thinner than the thickness of the gate dielectric 242.

The proposed structures provide advantages. In cases where the gatestacks 280 and the protection structure 250 are otherwise absent, thegate dielectric 242 and the gate electrode 244 may directly contact theILD layer 276. When a planarization process is performed on the ILDlayer 276, the planarization process will remove portions of the ILDlayer 276 to expose underlying features of the gate stack 360 forsubsequent processing (e.g., etching for the formation of replacementgate stack 380). However, due to the various types of features formed inthe level of the ILD layer 276 (e.g., dielectric, metal, polysilicon,etc.), the planarization process may cause dishing in the ILD layer 276(as the various materials are removed at different rates during theplanarization process). In some severe instances, the dishing may causeimproperly removal of the underlying gate electrode 244 or the gatedielectric 242. Also, the dishing effect may affect the area of thechannel 273 of the first-voltage device 210 a. For example, in caseswhere the gate stacks 280 and the protection structure 250 are otherwiseabsent, the area of the channel 273 of the first-voltage device 210 amay be reduced to, e.g., about 20 μm times 20 μm, which may not meethigh design requirements.

The presence of the gate stacks 280 and the protection structure 250 mayprovide structural support during the planarization process. Thepresence of the gate stacks 280 and the protection structure 250 maymitigate the extent of dishing in the ILD layer 276. Moreover, due tothe structural support of the gate stacks 280 and the protectionstructure 250, the channel dimensions of the first-voltage device 210 amay be increased. In some embodiments, the area of the channel 273 ofthe first-voltage device 210 a may be increased, e.g., to about 200 μmtimes 200 μm, but the present disclosure is not limited thereto.Further, the presence of the protection structure 250 may serve as anadditional spacer, in addition to the gate spacer 258, between the gatedielectric 242 and the source/drain regions 270.

FIG. 29 illustrates the formation of a dielectric layer 290 overreplacement gate stacks 280 and 380. The dielectric layer 290 may beformed of a material selected from the same candidate materials forforming the ILD layer 276. The materials of the ILD layer 276 and thedielectric layer 290 may be the same or different from each other.

Referring to FIG. 29 , contact plugs 292 and 392 are formed in thedielectric layer 290 and the LD layer 276. The formation process mayinclude forming contact plug openings in the ILD layer 276 and thedielectric layer 290 to expose the source/drain regions 270/370, thegate electrode 244 and the gate electrode 384, and filling the contactplug openings to form the contact plugs 292 and 392. In someembodiments, the contact plugs 292 on the gate electrode 244 may bereferred to as gate vias of the first-voltage device 210 a. In someembodiments, at least one of the contacts plugs 292 on the gateelectrode 244 is between two gate stacks 280. In alternativeembodiments, the contact plugs 292 in the first device region 202 a maybe formed over the top surface of the gate stack 280. A bias voltage maythus be supplied through the contact plug 292 and the gate stack 280 tothe gate electrode 244.

Referring to FIG. 30 , FIG. 30 illustrates a top view of the gate stacks280, the protection structure 250, the gate structure 240, thesource/drain regions 270, and the contact plugs 292 according to aspectsof one or more embodiments of the present disclosure. The contact plugs292 land on the gate electrode 244 may be referred to as gate vias ofthe first-voltage device 210 a. In some embodiments, the gate vias 292may be configured to land on the gate electrode 244 at a location wherethe gate electrode 244 does not overlap the deep well region 232.

Referring to FIG. 31 , an interconnect structure 310 is arranged overthe dielectric layer 290. The interconnect structure 310 may compriseone or more inter-metal dielectric (IMD) layers 312. The IMD layer 312may comprise, for example, one or more layers of an oxide, a low-kdielectric, or an ultra-low-k dielectric. The IMD layer 312 may surroundconductive patterns (including metal wires and metal vias) 314 thatcomprise, for example, copper, tungsten, and/or aluminum. In someembodiments, the contact plugs 292 are configured to electrically couplethe source/drain regions 270 of the first-voltage device 210 a to afirst conductive pattern 314 of the interconnect structure 310. In someembodiments, the contact plugs 392 are configured to electrically couplethe source/drain regions 370 of the second-voltage device 210 b to thefirst conductive pattern 314 of the interconnect structure 310.

The interconnect structure 310 may comprise one or more dielectriclayers 316 and 318 disposed between the IMD layers 312. The dielectriclayers 316 and 318 may serve as etch stop layers. In some embodiments,the dielectric layers 316 include dielectric materials, such as SiN,SiCN, SiCO, combinations thereof, or the like. In some embodiments, thedielectric layer 316 includes a multilayer structure, e.g., formed of anitride layer and an oxide layer. In some embodiments, the dielectriclayers 318 include silicon nitride, silicon carbide, and the like. Insome embodiments, the interconnection structure 310 further includesbarrier layers, such as formed of Ta or TaN, between the IMD layers 312and the conductive patterns 314.

An under-bump metallization (UBM) stack 320 is arranged over theinterconnect structure 310. In some embodiments, the UBM stack 320comprises a passivation layer 322 and a UBM layer 324. In someembodiments, the passivation layer 322 comprises one or more layers ofSiO₂, silicon nitride (Si₃N₄), polyimide compounds, or other suitablematerials. The passivation layer 322 may include a single-layeredstructure or a multiple layered structure. For example, the passivationlayer 322 may be a bi-layered structure as shown in FIG. 31 , but thedisclosure is not limited thereto. In some embodiments, the bi-layeredpassivation layer 322 may include a first dielectric layer 322 a and asecond dielectric layer 322 b. The UBM layer 324 contacts an upperconductive feature (e.g., a conductive pattern 314) of the interconnectstructure 310. The UBM layer 324 may comprise, for example, aluminum,titanium, tungsten, or some other suitable material. The UBM layer 324is configured to provide an interface between an overlying solder bump(not shown) and an underlying conductive feature (e.g., a conductivepattern 314) of the interconnect structure 310.

The structures of the present disclosure are not limited to theabove-mentioned embodiments, and may have other different embodiments.To simplify the description and for the convenience of comparisonbetween each of the embodiments of the present disclosure, the identicalcomponents in each of the following embodiments are marked withidentical numerals. For making it easier to compare the differencebetween the embodiments, the following description will detail thedissimilarities among different embodiments and the identical featureswill not be repeated.

FIG. 32 is a schematic drawing illustrating a semiconductor structure400 at a fabrication stage according to aspects of one or moreembodiments of the present disclosure. Referring to FIG. 32 , aplurality of protection pillars 250P are formed instead of the gatestacks 280 previously discussed. In some embodiments, the protectionpillars 250P and the protection structure 250 may be formed in a sameformation process, and thus have the same height and are formed of thesame materials. The protection pillars 250P are formed over the gatestructure 240. The protection pillars 250P land on the gate electrode244. The protection pillars 250P formed over the first-voltage device210 a may serve as protection structures. For example, the protectionpillars 250P may serve as protection structures for protecting theunderlying gate structure 240 during the planarization of the ILD layer276.

FIG. 33 illustrates a top view of the protection pillars 250P, theprotection structure 250, the gate structure 240, the source/drainregions 270, and the contact plugs 292 according to aspects of one ormore embodiments of the present disclosure. The protection pillars 250Pmay a width W_(s) and a length L_(s). The width W_(s) and the lengthL_(s) may be substantially equal. The width W_(s) may be in the rangebetween about 0.4 μm and about 1.0 μm in accordance with someembodiments. The protection pillars 250P may have differentconfigurations. In alternative embodiments, the width W_(s) is differentfrom the length L_(s). The width W_(s) may be less than the width W2 orthe width W1 of the protection structure 250. In alternativeembodiments, the width W_(s) is substantially equal to the width W2 (orthe width W1). The width W_(s) and the length L_(s) may be configuredbased on different requirements for different semiconductor devices.

A spacing S3 is arranged between two adjacent protection pillars 250P.The spacing S3 may be in the range between about 0.4 μm and about 1.0 μmin accordance with some embodiments. The spacing S3 may be greater thanthe width W_(s). In some embodiments, a ratio of the width W_(s) to thespacing S3 is less than 1. A spacing S4 is arranged between theprotection structure 250 and the neighboring protection pillar 250P. Insome embodiments, the spacing S4 is less than or substantially equal tothe spacing S3. The spacing S3 and the spacing S4 may be configuredbased on different requirements for different semiconductor devices.

The protection pillars 250P land on the gate electrode 244. Each of theprotection pillars 250P overlaps the gate electrode 244. In someembodiments, an area of the gate electrode 244 exposed from theprotection structure 250 is defined as X. A total area of the protectionpillars 250P overlapping the gate electrode 244 is defined as Z. A ratioZ/X may be in the range between about 50% and about 80% in accordancewith some embodiments. The ratio Z/X may be also known as a patterndensity of the protection pillars 250P. In other words, the patterndensity of the protection pillars 250P may be in the range between about50% and about 80%. The pattern density of the protection pillars 250Pmay be configured based on different requirements for differentsemiconductor devices.

The embodiments of the present disclosure have some advantageousfeatures. It is desirable to allow the HV/MV MOS devices and the LV MOSdevices to share the processes for forming replacement gates in order toreduce manufacturing cost. However, the planarization for exposing thedummy gate electrodes of the LV MOS devices may result in loss of therecessed gate electrodes of the HV/MV MOS devices. This means that theHV/MV MOS devices are unable to share the manufacturing processes informing replacement gates of the LV MOS devices. By forming a protectionstructure to cover the HV/MV MOS devices and forming the dummy gateelectrodes of the LV MOS devices (or forming protection pillars) overthe recessed gate electrodes of the HV/MV MOS devices, the planarizationmay be performed without loss of the gate electrodes in HV/MV MOSdevices. In addition, in accordance with the embodiments of the presentdisclosure, the method for the forming of the source/drain regions inthe LV MOS devices may be used as the forming of the doped region in thegate electrode of HV/MV MOS devices during a same process, and hence theproduction cost is reduced.

In accordance with some embodiments of the present disclosure, asemiconductor structure includes a substrate; a gate electrode disposedwithin the substrate; a gate dielectric layer disposed within thesubstrate and surrounding the gate electrode; a plurality of firstprotection structures disposed over the gate electrode; a secondprotection structure disposed over the gate dielectric layer, and a pairof source/drain regions on opposing sides of the gate dielectric layer.

In accordance with some embodiments of the present disclosure, asemiconductor structure includes a substrate comprising a first regionand a second region; a first gate structure located within the substratein the first region; a protection structure located in the first regionover the substrate and at least partially overlapping the first gatestructure; and a plurality of second gate structures disposed over thesubstrate. In some embodiments, a first subset of the plurality ofsecond gate structures is located in the first region and a secondsubset of the plurality of second gate structures is located in thesecond region, and the first subset and the second subset are separatedby the protection structure.

In accordance with some embodiments of the present disclosure, a methodof forming a semiconductor structure includes receiving a substrate;etching a recess in the substrate; depositing a gate dielectric layer onsidewalls and a bottom of the recess; depositing a gate electrode overthe gate dielectric layer, forming a first protection structure over thesubstrate to cover a top surface of the gate dielectric layer, andforming a plurality of second protection structures over the gateelectrode within the first protection structure.

The foregoing outlines structures of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate; a gate electrode disposed within the substrate; a gatedielectric layer disposed within the substrate and surrounding the gateelectrode; a plurality of first protection structures disposed over thegate electrode; a second protection structure disposed over the gatedielectric layer; and a pair of source/drain regions on opposing sidesof the gate dielectric layer, wherein each of the plurality of firstprotection structures includes a first conductive layer disposed overthe substrate and overlapping the gate electrode.
 2. The semiconductorstructure of claim 1, wherein each of the plurality of first protectionstructures includes a first dielectric layer disposed between therespective first conductive layer and the substrate and overlapping thegate electrode.
 3. The semiconductor structure of claim 2, wherein thefirst dielectric layer contacts the gate electrode.
 4. The semiconductorstructure of claim 1, further comprising a doped region disposed in anupper portion of the gate electrode.
 5. The semiconductor structure ofclaim 1, further comprising a plurality of silicide regions disposedbetween two adjacent first protection structures of the plurality offirst protection structures.
 6. The semiconductor structure of claim 1,wherein the plurality of first protection structures are separated fromeach other.
 7. The semiconductor structure of claim 1, wherein thesecond protection structure includes a second dielectric layer disposedover the substrate and overlapping the gate dielectric layer.
 8. Thesemiconductor structure of claim 1, wherein a portion of the secondprotection structure overlaps the gate electrode from a top-viewperspective.
 9. The semiconductor structure of claim 1, wherein theplurality of first protection structures are electrically isolated fromthe gate electrode.
 10. The semiconductor structure of claim 1, whereinthe second protection structure contacts the gate dielectric layer. 11.A semiconductor structure, comprising: a substrate comprising a firstregion and a second region; a first gate structure located within thesubstrate in the first region; a protection structure located in thefirst region over the substrate and at least partially overlapping thefirst gate structure; and a plurality of second gate structures disposedover the substrate, wherein a first subset of the plurality of secondgate structures is located in the first region and a second subset ofthe plurality of second gate structures is located in the second region,and the first subset and the second subset are separated by theprotection structure.
 12. The semiconductor structure of claim 11,wherein the first subset overlaps the first gate structure from atop-view perspective.
 13. The semiconductor structure of claim 11,wherein the first subset contacts the first gate structure.
 14. Thesemiconductor structure of claim 11, further comprising a gate viaelectrically connected to the first gate structure, wherein the gate viais disposed between two adjacent second gate structures of the firstsubset of the plurality of second gate structures.
 15. The semiconductorstructure of claim 11, wherein the protection structure encircles thefirst subset from a top-view perspective.
 16. The semiconductorstructure of claim 11, wherein a spacing between two adjacent secondgate structures of the plurality of second gate structures is greaterthan a width of one of the plurality of second gate structures.
 17. Amethod of forming a semiconductor structure, comprising: receiving asubstrate; etching a recess in the substrate; depositing a gatedielectric layer on sidewalls and a bottom of the recess; depositing agate electrode over the gate dielectric layer; forming a firstprotection structure over the substrate to cover a top surface of thegate dielectric layer; forming a plurality of second protectionstructures over the gate electrode within the first protectionstructure; and forming a plurality of doped regions in the gateelectrode.
 18. The method of claim 17, further comprising forming aplurality of silicide regions over the gate electrode between twoadjacent second protection structures of the plurality of secondprotection structures.
 19. The method of claim 17, wherein the formingof the plurality of second protection structures comprises performing areplacement gate process.
 20. The method of claim 17, wherein theplurality of second protection structures contacts the gate electrode.